A Novel Wide Bandgap Material for High Power, High Frequency Devoces VARIABLE WIDE BANDGAP MATERIAL FOR HIGH POWER, HIGH FREQUENCY DEVICES VARIABLE WIDE BANDGAP MATERIAL FOR HIGH POWER, HIGH FREQUENCY DEVICES
نویسنده
چکیده
Form Approved OMB No. 0704-0188 Public reporting burden for this collection of information is estimated to average 1 hour per response, including the time for reviewing instructions, searching existing data sources, gathering and maintaining the data needed, and completing and reviewing this collection of information. Send comments regarding this burden estimate or any other aspect of this collection of information, including suggestions for reducing this burden to Department of Defense, Washington Headquarters Services, Directorate for Information Operations and Reports (0704-0188), 1215 Jefferson Davis Highway, Suite 1204, Arlington, VA 222024302. Respondents should be aware that notwithstanding any other provision of law, no person shall be subject to any penalty for failing to comply with a collection of information if it does not display a currently valid OMB control number. PLEASE DO NOT RETURN YOUR FORM TO THE ABOVE ADDRESS. 1. REPORT DATE (DD-MM-YYYY) 13/01/2011 2. REPORT TYPE Final Technical 3. DATES COVERED (From To) June 1, 2007 – Nov. 30, 2010 4. TITLE AND SUBTITLE A Novel Wide Bandgap Material for High Power, High Frequency Devoces VARIABLE WIDE BANDGAP MATERIAL FOR HIGH POWER, HIGH FREQUENCY DEVICES VARIABLE WIDE BANDGAP MATERIAL FOR HIGH POWER, HIGH FREQUENCY DEVICES 5a. CONTRACT NUMBER
منابع مشابه
Gallium Phosphide IMPATT Sources for Millimeter-Wave Applications
The potentiality of millimter-wave (mm-wave) double-drift region (DDR) impact avalanche transit time (IMPATT) diodes based on a wide bandgap (WBG) semiconductor material, Gallium Phosphide (GaP) has been explored in this paper. A non-sinusoidal voltage excited (NSVE) large-signal simulation method has been used to study the DC and high frequency characteristics of DDR GaP IMPATTs dsigned to ope...
متن کاملWide Bandgap Semiconductor Devices and MMICs: A DARPA Perspective
This paper reports on the recent successful completion of Phase I of DARPA’s Wide Bandgap Semiconductor Technology Initiative (WBGSTI). Phase I results are given for semi-insulating substrates and epitaxial growth, and a description and expectations for the upcoming Phases II and III are also provided. INTRODUCTION Wide bandgap devices and MMICs with high power density, high power added efficie...
متن کاملGaN-Based RF Power Devices and Amplifiers Gallium nitride power transistors can operate at millimeter wave and beyond
| The rapid development of the RF power electronics requires the introduction of wide bandgap material due to its potential in high output power density, high operation voltage and high input impedance. GaN-based RF power devices have made substantial progresses in the last decade. This paper attempts to review the latest developments of the GaN HEMT technologies, including material growth, pro...
متن کاملStudy of Different Edge Terminations Used for 6H-SiC Power Diodes
Silicon Carbide is a wide bandgap semiconductor (3 eV for 6H-SiC at 300 K) suitable for high voltage, high temperature, high frequency and power devices. Its drift velocity
متن کاملSustained hole inversion layer in a wide-bandgap metal-oxide semiconductor with enhanced tunnel current
Wide-bandgap, metal-oxide thin-film transistors have been limited to low-power, n-type electronic applications because of the unipolar nature of these devices. Variations from the n-type field-effect transistor architecture have not been widely investigated as a result of the lack of available p-type wide-bandgap inorganic semiconductors. Here, we present a wide-bandgap metal-oxide n-type semic...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
عنوان ژورنال:
دوره شماره
صفحات -
تاریخ انتشار 2012